issue 3 - june 2003 semiconductors ZXMN6A09DN8 1 dual 60v n-channel enhancement mode mosfet summary v (br)dss =60v; r ds(on) =0.045 d =5.1a description this new generation of trench mosfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? low profile soic package applications ? dc - dc converters ? power management functions ? disconnect switches ? motor control ordering information device reel size tape width quantity per reel ZXMN6A09DN8ta 7? 12mm 500 units ZXMN6A09DN8tc 13? 12mm 2500 units device marking ? zxmn 6a09d top view so8
issue 3 - june 2003 semiconductors ZXMN6A09DN8 2 absolute maximum ratings parameter symbol limit unit drain-source voltage v dss 60 v gate source voltage v gs 20 v continuous drain current (v gs =10v; t a =25c) (b) (v gs =10v; t a =70c) (b) (v gs =10v; t a =25c) (a) i d 5.1 4.1 3.9 a pulsed drain current (c) i dm 25 a continuous source current (body diode) (b) i s 3.5 a pulsed source current (body diode) (c) i sm 25 a power dissipation at t a =25c (a)(d) linear derating factor p d 1.25 10 w mw/c power dissipation at t a =25c (a)(e) linear derating factor p d 1.8 14 w mw/c power dissipation at t a =25c (b)(d) linear derating factor p d 2.1 17 w mw/c operating and storage temperature range t j :t stg -55 to +150 c thermal resistance parameter symbol v alue unit junction to ambient (a)(d) r ja 71 c/w junction to ambient (a)(e) r ja 62.5 c/w junction to ambient (b)(d) r ja 50 c/w notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t 10 secs. (c) repetitive rating 25mm x 25mm fr4 pcb, d=0.02 pulse width=300s - pulse width limited by maximum junction temperature. (d) for device with one active die (e) for device with two active die running at equal power.
issue 3 - june 2003 semiconductors ZXMN6A09DN8 3 typical characteristics
issue 3 - june 2003 semiconductors ZXMN6A09DN8 4 electrical characteristics (at t a = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss 60 v i d =250 a, v gs =0v zero gate voltage drain current i dss 1 a v ds =60v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) 1.0 v i d =250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.045 0.070 ? ? v gs =10v, i d =8.2a v gs =4.5v, i d =7.4a forward transconductance (3) g fs 15 s v ds =15v,i d =8.2a dynamic (3) input capacitance c iss 1407 pf v ds =40v,v gs =0v, f=1mhz output capacitance c oss 121 pf reverse transfer capacitance c rss 59 pf switching (2) (3) turn-on delay time t d(on) 4.9 ns v dd =15v, i d =3.5a r g ? 6.0 ? ,v gs =10v (refer to test circuit) rise time t r 5.0 ns turn-off delay time t d(off) 25.3 ns fall time t f 4.6 ns gate charge q g 12.4 nc v ds =15v,v gs =5v, i d =3.5a total gate charge q g 24.2 nc v ds =15v,v gs =10v, i d =3.5a gate-source charge q gs 5.2 nc gate-drain charge q gd 3.5 nc source-drain diode diode forward voltage (1) v sd 0.85 0.95 v t j =25c, i s =6.6a, v gs =0v reverse recovery time (3) t rr 26.3 ns t j =25c, i f =3.5a, di/dt= 100a/ s reverse recovery charge (3) q rr 26.6 nc notes (1) measured under pulsed conditions. width = 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
issue 3 - june 2003 semiconductors ZXMN6A09DN8 5 typical characteristics
typical characteristics issue 3 - june 2003 semiconductors ZXMN6A09DN8 6
issue 3 - june 2003 semiconductors ZXMN6A09DN8 7 europe zetex plc fields new road chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services conce rned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex plc 2003 package dimensions dim millimetres inches min max min max a 4.80 4.98 0.189 0.196 b 1.27 bsc 0.05 bsc c 0.53 ref 0.02 ref d 0.36 0.46 0.014 0.018 e 3.81 3.99 0.15 0.157 f 1.35 1.75 0.05 0.07 g 0.10 0.25 0.004 0.010 j 5.80 6.20 0.23 0.24 k 0808 l 0.41 1.27 0.016 0.050
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